Defense Advanced Research Project Agency (DARPA) has picked the The University of Texas at Austin to develop the next generation of high-performing semiconductor microsystems for the Pentagon.
Texas Institute for Electronics (TIE) at The University of Texas, Austin, will establish a national open access R&D and prototyping fabrication facility that will enable DOD to create higher performance, lower power, light weight and compact defense systems.
Such technology could apply to radar, satellite imaging, unmanned aerial vehicles or other systems, according to UT Austin.
3D heterogeneous integration (3DHI) microsystems research
DARPA stated that it will work with the University of Texas at Austin and its existing Texas Institute for Electronics research center to establish a consortium to support 3D heterogeneous integration (3DHI) microsystems research, development, and low-volume production .
Building on the program’s Phase 0 foundational research, NGMM’s next two phases focus on a domestic capability that comprehensively addresses key challenges and strengthens U.S. technological leadership and innovation.
“We’re holistically addressing tomorrow’s challenges and solutions . That starts with an onshore, open-access center for 3DHI microsystems prototyping and pilot line manufacturing,” said Dr. Whitney Mason , director of DARPA’s Microsystems Technology Office.
“This accessibility to researchers from academia, government, and industry will break down silos and foster an ecosystem that enhances the U.S. competitive advantage.”
The Next-Generation Microelectronics Manufacturing program, known as NGMM, aims to unlock accessible prototyping for the chips of tomorrow with a new agreement to establish the first-ever national center for advancing U.S.-based microelectronics manufacturing.
According to DARPA, the consortium will leverage partnerships spanning organizations – across the defense industrial base, domestic foundries, vendors and startups, designers and manufacturers, members of academia, and other stakeholders – to achieve a shared vision of national and economic security.
The project represents a total investment of $1.4 billion. The $840 million award from DARPA is a substantial return on the Texas Legislature’s $552 million investment in TIE, which has funded modernization of two UT fabrication facilities to strengthen long-term U.S. technology leadership.
Leading-edge microelectronics manufacturing
These facilities will be open to industry, academia and government, and will create dual-use innovations supporting the defense sector and the semiconductor industry, including startups, advancing technology for the betterment of society.
“By investing in leading-edge microelectronics manufacturing, we are helping secure this vulnerable supply chain, boosting our national security and global competitiveness, and driving innovation in critical technologies,” said U.S. Sen. John Cornyn .
“The next generation of high-performing semiconductors these resources will enable through DARPA’s partnership with UT TIE will help not only bolster our defense but also pave the way for the U.S. to reclaim its leadership role in this critical industry, and I look forward to seeing more Texas-led advancements in the years to come.”
The program is composed of two phases — each 2.5 years in length. In Phase 1, TIE will establish the center’s infrastructure and basic capabilities. In Phase 2, the center will engineer 3DHI hardware prototypes important to the Department of Defense and automate processes. It will also work with DARPA on separately funded design challenges.
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